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Other articles related with "interface traps"：
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57305 |
Wen-Hao Zhang(张文浩), Ma-Guang Zhu(朱马光), Kang-Hua Yu(余康华), Cheng-Zhan Li(李诚瞻),Jun Wang(王俊), Li Xiang(向立), and Yu-Wei Wang(王雨薇) |
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Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms |
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Chin. Phys. B
2023 Vol.32 (5): 57305-057305
[Abstract]
(173)
[HTML 1 KB]
[PDF 917 KB]
(195)
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77303 |
Peng Liu(刘鹏), Ji-Long Hao(郝继龙), Sheng-Kai Wang(王盛凯), Nan-Nan You(尤楠楠), Qin-Yu Hu(胡钦宇), Qian Zhang(张倩), Yun Bai(白云), and Xin-Yu Liu(刘新宇) |
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Impact of O2 post oxidation annealing on the reliability of SiC/SiO2 MOS capacitors |
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Chin. Phys. B
2021 Vol.30 (7): 77303-077303
[Abstract]
(478)
[HTML 1 KB]
[PDF 652 KB]
(102)
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107302 |
Si-Qi Jing(荆思淇), Xiao-Hua Ma(马晓华), Jie-Jie Zhu(祝杰杰)†, Xin-Chuang Zhang(张新创), Si-Yu Liu(刘思雨), Qing Zhu(朱青), and Yue Hao(郝跃) |
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Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments |
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Chin. Phys. B
2020 Vol.29 (10): 107302-
[Abstract]
(591)
[HTML 1 KB]
[PDF 1123 KB]
(78)
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97301 |
Ji-Long Hao(郝继龙), Yun Bai(白云), Xin-Yu Liu(刘新宇), Cheng-Zhan Li(李诚瞻), Yi-Dan Tang(汤益丹), Hong Chen(陈宏), Xiao-Li Tian(田晓丽), Jiang Lu(陆江), Sheng-Kai Wang(王盛凯) |
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Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation |
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Chin. Phys. B
2020 Vol.29 (9): 97301-097301
[Abstract]
(566)
[HTML 0 KB]
[PDF 547 KB]
(58)
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37301 |
Xin-Yu Liu(刘新宇), Ji-Long Hao(郝继龙), Nan-Nan You(尤楠楠), Yun Bai(白云), Yi-Dan Tang(汤益丹), Cheng-Yue Yang(杨成樾), Sheng-Kai Wang(王盛凯) |
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High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation |
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Chin. Phys. B
2020 Vol.29 (3): 37301-037301
[Abstract]
(770)
[HTML 1 KB]
[PDF 1104 KB]
(247)
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67304 |
Si-Qin-Gao-Wa Bao(包斯琴高娃), Xiao-Hua Ma(马晓华), Wei-Wei Chen(陈伟伟), Ling Yang(杨凌), Bin Hou(侯斌), Qing Zhu(朱青), Jie-Jie Zhu(祝杰杰), Yue Hao(郝跃) |
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Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2019 Vol.28 (6): 67304-067304
[Abstract]
(841)
[HTML 1 KB]
[PDF 591 KB]
(197)
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37104 |
Wenbo Li(李文波), Ling Li(李玲), Fangfang Wang(王方方), Liu Zheng(郑柳), Jinghua Xia(夏经华), Fuwen Qin(秦福文), Xiaolin Wang(王晓琳), Yongping Li(李永平), Rui Liu(刘瑞), Dejun Wang(王德君), Yan Pan(潘艳), Fei Yang(杨霏) |
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Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study |
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Chin. Phys. B
2017 Vol.26 (3): 37104-037104
[Abstract]
(713)
[HTML 1 KB]
[PDF 1782 KB]
(590)
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57304 |
Zhang Yue (张月), Zhuo Qing-Qing (卓青青), Liu Hong-Xia (刘红侠), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET |
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Chin. Phys. B
2014 Vol.23 (5): 57304-057304
[Abstract]
(539)
[HTML 1 KB]
[PDF 303 KB]
(388)
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5479 |
Hu Shi-Gang(胡仕刚),Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Cao Yan-Rong(曹艳荣), Chen Chi(陈炽), and Wu Xiao-Feng(吴笑峰) |
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Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature |
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Chin. Phys. B
2009 Vol.18 (12): 5479-5484
[Abstract]
(1571)
[HTML 1 KB]
[PDF 169 KB]
(962)
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1445 |
Liu Hong-Xia(刘红侠), Li Zhong-He(李忠贺), and Hao Yue(郝跃) |
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Degradation characteristics and mechanism of PMOSFETs under NBT--PBT--NBT stress |
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Chin. Phys. B
2007 Vol.16 (5): 1445-1449
[Abstract]
(1449)
[HTML 1 KB]
[PDF 458 KB]
(833)
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833 |
Li Zhong-He (李忠贺), Liu Hong-Xia (刘红侠), Hao Yue (郝跃) |
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The role of hydrogen in negative bias temperature instability of pMOSFET |
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Chin. Phys. B
2006 Vol.15 (4): 833-838
[Abstract]
(1521)
[HTML 1 KB]
[PDF 312 KB]
(1320)
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